Schottky Diode VS P-N Diode

Schottky Diode

Reverse current due to majority carriers that overcome the barrier.
less temperature dependence

Forward current due to majority injection from the semiconductor.

The cut-in voltage is quite small.

Switching speed controlled by thermalization of hot injected electrons across the barrier. few picoseconds.

Essentially no recombination in depletion region.
ideality factor 1.0

P-N Diode

Reverse current due to minority carriers diffusing to the depletion layer.

strong temperature dependence

Forward current due to minority carrier injection from n- and p- sides.

Forward current needed to make the device conducting (the cut-in voltage) is large.

Switching speed controlled by recombination (elimination) of minority injected carriers.

ideality factor in I-V charateristics 1.2-2.0 due to recombination in depletion region.

Reference: 
 Semiconductor devices : an introduction / Jasprit Singh.